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United States : Microsemi wins contract under PowerAmerica's $70M backing from U.S. DoE
Publish Date : 22-Aug-2017
A major provider of semiconductor solutions differentiated by power, security, reliability and performance, Microsemi Corporation, has joined PowerAmericaa production institute comprised of public and private representatives from the semiconductor industry, the U.S. Department of Energy, national laboratories and academiato fast-track the commercialization and adoption of wide band gap semiconductors.
Microsemi heen offered a contract as part of PowerAmerica's $70 million dollar support from the U.S. Department of Energy over 5 years, assigned to encourage the adoption of advanced semiconductor components made with silicon carbide (SiC) and gallium nitride (GaN) into a vast range of products and systems.
Microsemi's role at PowerAmerica will especially aim to support the commercialization of 1.7 kilovolt (kV) and 3.3 kV SiC MOSFETs and SiC Schottky diodes as it develops next-generation devices. With major benefits to include enhanced efficiency, high temperature/voltage operational stability, better power handling and smaller form factors, the 1.7 kV and 3.3 kV devices will expand the number of applications where SiC technology can be used. Ideal for the industrial and aerospace markets, as well as the defense market where U.S.-based suppliers are required, target applications for the devices comprise automotive electrification, railway application (traction), aerospace actuation systems, power generation and distribution, solar
inverters, motor drive and electromagnetic railgun.
Leon Gross, vice president and business unit manager for Microsemi's Power Discretes and Modules business unit, said, "We are pleased our leadership in the SiC market as well as our investment in this technology have been recognized by PowerAmerica's leadership, and we are excited to leverage our expertise as we collaborate with this talented consortium. As one of the limited number of suppliers serving this market, Microsemi looks forward to providing cost-effective state-of-the-art 1.7 kV and 3.3 kV SiC devices with the ability for quick high volume scale up via a 6-inch foundry with short lead times, ultimately leading to faster design cycles for customers."
